|
Tuesday, October 16, 15:00, Room “A”
ADVANCED DEVICES AND STRUCTURES
Session D: Oral presentations
Chairmen: F. Udrea, Cambridge University, UK.
A.M. Ionescu, Ecole Polytechnique Federale de Lausanne, Switzerland
Invited Paper
15:00 |
VERTICAL MOSFETs FOR HIGH PERFORMANCE, LOW COST CMOS,
S. Hall, L. Tan, O. Buiu, M.M. Hakim*, T. Uchino*, P. Ashburn*, W. Redman-White*, Univ. of Liverpool, *Univ. of Southampton, UK. |
Invited Paper
15:30
|
SMALL SLOPE MICRO/NANO-ELECTRONIC SWITCHES,
A. M. Ionescu, K. Boucart, K.E. Moselund, V. Pott, D. Tsamados, Ecole Polytechnique Fédérale de Lausanne, Switzerland. |
D.1
15:50 |
ONE DIMENSIONAL MODEL FOR THE DURATION OF THE HIGH BREAKDOWN PHASE IN DEEP DEPLETION POWER DEVICES,
E. Napoli, Univ. of Napoli Federico II, Italy. |
D 2
16:10 |
A SINGLE POLY CMOS PROCESS EVALUATION FOR FLOATING GATE APPLICATIONS,
M. Badila, T. Dunca,
P. Cosmin, Catalyst Semiconductor Inc., CA, USA. |
D 3
16:30 |
FABRICATION OF DIAMOND BASED SCHOTTKY BARRIER DIODES WITH OXIDE RAMP TERMINATION,
G. Brezeanu1, M. Avram2, M. Brezeanu3, C. Boianceanu1, F. Udrea3, G.A.J. Amaratunga3, 1“Politehnica” Univ. of Bucharest, 2IMT-Bucharest, Romania, 3Univ. of Cambridge, U.K |
D 4
16:50 |
Si DIODE TEMPETARURE SENSOR BEYOND 300OC,
S. Santra, P.K. Guha,
M.S. Haque, S.Z. Ali, F. Udrea, Univ. of Cambridge, UK. |
D 5
17:10
# |
ENSEMBLE MONTE CARLO SIMULATION OF A PSEUDOMORPHIC HEMT STRUCTURE,
C. Amza, I. Cimpian*, M.D. Profirescu*, ATC ROM S.R.L., Bucharest, *”Politehnica” Univ. of Bucharest, Romania. |
______
# Student paper
|
|
