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Monday, October 15, 17:10, Room “B”
NANOELECTRONICS
Session N: Oral presentation
Chairmen: M. Dragoman, IMT-Bucharest, Romania
G.A.J. Amaratunga, Cambridge University, UK
Invited
Paper
17:10 |
QUASI BALLISTIC TRANSPORT IN ADVANCED MOSFET DEVICES,
R. Clerc, P. Palestri*,
Q. Rafhay, M. Ferrier*, G. Pananakakis,
G. Ghibaudo, L. Selmi*, IMEP, Minatec, Grenoble, France, *DIEGM, Univ. Udine, Italy |
N. 1
17:40 |
WHY THE ENERGY LEVELS OBSERVED IN ELECTRICAL TRANSPORT, PHOTOTRANSPORT AND PHOTOLUMINESCENCE ARE DIFFERENT ?,
M.L. Ciurea, V. Iancu*, INCD-FM, *”Politehnica” Univ. of Bucharest, Romania. |
N. 2
18:00 |
SINGLE DEVICE LOGIC USING 3D GATING OF SCREEN GRID FIELD EFFECT TRANSISTORS,
Y. Shadrokh, K. Fobelets,
J.W. Velazquez-Perez*, Imperial College London, UK, *Univ. of Salamanca, Spain. |
N. 3
18:20 |
MANUFACTURABILITY ISSUES OF REDUNDANT NANOGATES,
F. Martorell,
S.D. Cotofana*, A. Rubio, Polytechnical Univ. of Catalonia, Spain, *TU Delft, The Netherlands. |
N. 4
18:40 |
HIGH FREQUENCY DEVICES BASED ON GRAPHENE,
M. Dragoman1, D. Dragoman2, A.A. Muller3, 1IMT-Bucharest, 2Univ. Bucharest, Romania, 3Technische Univ. Munchen, Germany. |
N. 4
19:00 |
EPR COMPARISON OF THE SPIN DYNAMICS IN NANOPARTICLES, NANOWIRES AND BULK COLOSSAL MAGNETORESISTIVE MANGANITES,
L.M. Giurgiu1, M.N. Grecu2, Al. Darabont1, A. Popa1, D. Toloman1, O. Raita1, S. Tanasescu3, V.V. Grecu4, S. Hoffman5, M.D. Glinchuk6, G. Papavassiliou7, M. Fardis7, 1National Inst. for R&D of Isotopic and Molecular Technologies, Cluj-Napoca, 2INCD-FM, Bucharest, 3Inst. of Physical Chemistry “I.G.Murgulescu”, Bucharest, 4Univ. of Bucharest, Romania, 5National Inst. for Molecular Physics, Poznan, Poland, 6Inst. for Problems of Materials Science, Kiev, Ukraine, 7NCSR Demokritos, Athens, Greece. |
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