AD.1 15:00

EFFECTS OF α-PARTICLES IRRADIATION ON POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS, L. Michalas,
G.J. Papaioannou, A.T. Voutsas*, Univ. of Athens, Greece, *Material and Device Applications Laboratory Sharp Labs. of America, Washington, USA.

AD.2 15:20

THE DRIFT/DIFFUSION RATIO OF THE MOS TRANSISTOR DRAIN CURRENT, A. Rusu1, A.M. Ionescu2, S. Eftimie3, 1“Politehnica” Univ. of Bucharest, Romania, 2Ecole Polytechnique Federale de Lausanne, Switzerland, 3Catalyst Semiconductor, Bucharest, Romania.

AD.3 15:40

A COMPLETE ANALYTICAL SUBMICRON MOS TRANSISTOR MODEL FOR ANALOG APPLICATIONS, G. Brezeanu, A. Sevcenco, C. Boianceanu*, I. Rusu, F. Draghici, “Politehnica” Univ. of Bucharest, *Mosis Romania, Bucharest, Romania.

AD.4 16:00

A NOVEL FERMI LEVEL CONTROLLED HIGH VOLTAGE TRANSISTOR PREVENTING SUB-THRESHOLD HUMP,
B.-C. Park1,2, S.-Y. Lee1,3, D.-R. Chang2, K.-I. Bang2, S.-J. Kim2, S.-B. Yi2, E.-S. Jung2, 1Samsung Semiconductor Inst. of Technology, Gyeonggi-Do, 2DDI PA Team, 3Product QA Team., Samsung Electronics Co., Gyeonggi-Do, Korea.

AD.5 16:20

CAPACITANCE-VOLTAGE CHARACTERISTICS OF THE CdS/CdTe/Te HETEROJUNCTIONS, N. Maticiuc, N. Spalatu, T. Potlog, Moldova State Univ., Chisinau, Moldova.

AD.6 16:40

TRANSIENT SURGE VOLTAGE SUPPRESSORS AND THEIR PERFORMANCE IN CIRCUIT OVER-VOLTAGE PROTECTION, V.V.N. Obreja, IMT-Bucharest, Romania.

AD.7 17:00

SPIN-DEPENDENT CURRENT IN RESONANT TUNNELING DIODE WITH FERROMAGNETIC GaMnN LAYERS,
N.Y. Tang, Shanghai Univ. of Electric Power, P. R. China.