D.1

THREE DUAL SWITCHING POWER SUPPLIES MODULES, A. Florescu, A. Radoi, C. Radoi, D.N. Vizireanu, “Politehnica” Univ. of Bucharest, Romania.

D.2

C-V PARAMETER EXTRACTION TECHNIQUE FOR CHARACTERISATION THE DIFFUSED JUNCTIONS OF SEMICONDUCTOR DEVICES, M.J. Cristea, F. Babarada, “Politehnica” Univ. of Bucharest, Romania.

D.3

ANALYTICAL MODELLING OF BASE TRANSIT TIME OF SiGe HBTS INCLUDING EFFECT OF TEMPERATURE, S. Basu, Kalyani Govt. Engineering College, Kalyani, Nadia, India.

D.4

NEW TECHNOLOGIES FOR MICROELEC­TRONICS DEVICES PROCESSING BY LASER LOCALLY STRUCTURAL MODIFICATIONS,
D. Ulieru1, A. Matei2, E. Ulieru3, A. Tantau3, F. Babarada4, 1ROMES SA, Bucharest, 2IMT-Bucharest, 3SITEX 45 SRL, Bucharest, 4“Politehnica” Univ. of Bucharest, Romania.

D.5

EFFECT OF FREQUENCY AND PHASE SETTING IN OBTAINING SCANNING GUIDED WAVES IN COMPOSITE PLATES, N. Constantin, St. Sorohan, M. Gavan, V. Anghel, V. Raetchi*,“Politehnica” Univ. of Bucharest,*Vovasonic Equipment SRL, Bucharest, Romania.

D.6

PROGRAMMABLE CELLULAR AUTOMATA BASED ENCRYPTION ALGORITHM, P. Anghelescu, E. Sofron, C.-I. Rincu*, V.-G. Iana, Univ. of Pitesti, *Military Technical Academy, Bucharest, Romania.

D.7

ANALYSIS OF POTENTIAL FUNCTION IN CYLINDRICAL NANOWIRES, M. Zangeneh, H. Aghababa, B. Forouzandeh, Univ. of Tehran, Iran.

D.8

A COMPACT CURRENT- VOLTAGE MODEL FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS, H. Hosseinzadegan, H. Aghababa, M. Zangeneh, A. Afzali-kusha, B. Forouzandeh, Univ. of Tehran, Iran.

D.9

TUNELLING LEAKAGE CURRENT CHARACTERI­ZATION OF SILICON OXIDE AND HIGH-k DIELECTICS, FOR ADVANCED SEMICONDUCTOR DEVICES, F. Babarada, R. Plugaru*, A. Rusu, “Politehnica” Univ. of Bucharest, *IMT-Bucharest, Romania.

D.10

Characterization and Modeling of Planar Circuits by an Iterative MethodM . Tellache, B. Haraoubia, H. Baudrand*, USTHBAlgiers, Algeria, *INP, ENSEEIHT, Toulouse, France.