M. 1
9:00

FINITE ELEMENT ANALYSIS OF MEMS SQUARE PIEZORESISTIVE ACCELEROMETER DESIGNS WITH LOW CROSSTALK, N. Bhalla, S.-S. Li*, D. Wen-Yaw Chung, Chung Yuan Christian University, *National Tsing Hua University, Taiwan, R.O.C.

M. 2
9:20

THE NON-LINEAR BEHAVIOR OF THE NOTHING ON INSULATOR NOI NANOTRANSIS­TOR FROM THEORETICAL AND NUMERICAL STUDIES, C. Ravariu, A. Rusu, “Politehnica” University of Bucharest, Romania.

M. 3
9:40

TURN-OFF FAILURE MECHANISM IN LARGE AREA IGCTS, N. Lophitis1, M. Antoniou1, F. Udrea1, T. Wikstrom2, I. Nistor3, 1University of Cambridge, UK, 2ABB Switzerland Ltd, Semiconductors, Lenzburg, 3ABB Switzerland Ltd, Corporate Research, Dattwil, Switzerland.

M. 4
10:00

NON-IDEAL BEHAVIOR OF A COMPARATOR-BASED RELAXATION OSCILLATOR, M. Pistol1, M. Mocanu1, R. Ghinea1, L. Goras1,2, 1“Gh. Asachi” Technical University of Iasi, 2Institute of Computer Science, Romanian Academy, Iasi Branch, Romania.

M. 5
10:20

A CONVERGENCE ROBUST METHOD TO MODEL SNAPBACK FOR ESD SIMULATION,
L. Wei, C.E. Gill*, W. Li, R. Wang, M. Zunino*, Freescale Semiconductor China, Beijing, China, *Freescale Semiconductor, Tempe,AZ, USA.

M. 6
10:40

MOS SATURATION MODEL BASED ON CHANNEL RESISTANCE, M. Craciun, A. Rusu,
D. Bogdan, L. Dobrescu, “Politehnica” University of Bucharest, Romania.