IC1. 1
11:30

RF POWER POTENTIAL OF HIGH-K METAL GATE 28 nm CMOS TECHNOLOGY, R. Ouhachi1, A. Pottrain1,2, D. Ducatteau1, E. Okada1, C. Gaquiere1, D. Gloria2, 1UMR-CNRS, Villeneuve d’Ascq, 2STMicroelectronics, Crolles, France.

IC1. 2
11:50

SOFT-START LOW VOLTAGE CMOS LDO, C. Stanescu, C. Dinca, R. Iacob*, ON Semiconductor Romania S.R.L., Bucharest, Romania, *ON Semiconductor Corp. Santa Clara, U.S.A.

IC1. 3
12:10
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COMPARATIVE STUDY OF TWO LDOs FOR SUPPLYING A 2.5GHz RAIL-TO-RAIL VCO, C. Raducan, I. Kovacs, M. Neag, Technical Univ. of Cluj-Napoca, Romania.

IC1. 4
12:30

DETERMINING THE OPTIMAL NUMBER OF GAIN STAGES OF VARIABLE GAIN AMPLIFIERS USED IN MULTI−STANDARD HOMODYNE WIRELESS RECEIVERS, S. Spiridon1,2, C. Dan1,
M. Bodea1, 1“Politehnica” Univ. of Bucharest, Romania, 2Now with Broadcom Corporation, Bunnik, The Netherlands.

IC1. 5
12:50
▲

AN IMPROVED LOW-OFFSET AND LOW-POWER DESIGN OF COMPARATOR FOR FLASH ADC, Z. Shuo, W. Zongmin, Z. Liang, F. Wenxiao, D. Yang, Beijing, Microelectronics Tech. Institution (BMTI), Beijing, R.P. China.