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Wednesday, October 15, 15:00, Room “A”
MODELLING
Session: M: Oral presentations
Chair:
F. Draghici, “Politehnica” University of Bucharest, Romania
M. Brezeanu, Honeywell Romania SRL, (SWLB) Bucharest, Romania
| M.1 |
15:00 |
BEHAVIORAL MODELING OF POLAR POWER AMPLIFIERS BASED ON X-PARAMETERS BY CHARACTERIZING ENVELOPE PATH USING TUNABLE LOW-PASS FILTERS, Y. Wang, O.K. Jensen, T. Larsen, Aalborg Univ., Denmark. |
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| M.2 |
15:20 |
FLUORESCENCE AND FLUORESCENCE QUENCHING IN A TWO-LEVEL SYSTEM,
T. Sandu, IMT Bucharest, Romania. |
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| M.3 |
15:40 |
CAPACITANCE OF BACK-GATED NANOWIRES IN VARIOUS DIELECTRIC EMBEDDINGS, G. Boldeiu, V. Moagar-Poladian, T. Sandu, IMT Bucharest, Romania. |
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| M.4 |
16:00 |
3D MODELLING OF A THERMOPILE-BASED SOI CMOS THERMAL WALL SHEAR STRESS SENSOR, C. Falco1, A. De Luca1, S. Sarfraz1,
I. Haneef2, J. Coull1, S.Z. Ali3, F. Udrea1, 1Univ. of Cambridge, U.K., 2Inst. of Avionics & Aeronautics, Air Univ., Islamabad, Pakistan, 3Cambridge CMOS Sensors Ltd., UK. |
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