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Wednesday, October 15, 10:00, Room “A”

 

SEMICONDUCTOR  DEVICES

Session:  SD: Oral presentations

Chair: 
            D. Dobrescu, “Politehnica” Univ. of Bucharest, Romania
            M. Bazu, IMT Bucharest, Romania

SD.1 10:00 PERFORMANCES UNDER SATURATION OPERATION OF p-CHANNEL FINFETs ON SOI SUBSTRATES AT CRYOGENIC TEMPERATURE, H. Achour1,4, B. Cretu2,3, J.-M. Routoure1,3, R. Carin 1,3 , A. Benfdila4, E. Simoen5, C. Claeys5,6, 1Univ. of Caen Basse-Normandie, 2ENSICAEN,  3CNRS, Caen, France, 4Mouloud Mammeri Univ. of Tizi-Ouzou, Algeria, 5IMEC, Leuven, 6KU Leuven, Belgium.
     
SD.2 10:20 TEMPERATURE BEHAVIOR OF 4h-SiC MOS CAPACITOR USED AS A GAS SENSOR, R. Pascu, G. Pristavu*, M. Badila*, Gh. Brezeanu*, F. Draghici*, F. Craciunoiu,IMT Bucharest, *“Politehnica” Univ. of Bucharest, Romania.
     
SD.3 10:40 PRACTICAL BEHAVIOR OF CHARGING APPLICATIONS AND COMMAND STRATEGY IN WIRELESS POWER SUPPLIES, E. Ceuca, Gh. Brezeanu*, 1 Decembrie 1918 Univ., Alba Iulia, *“Politehnica” Univ. of Bucharest, Romania..
     
SD.4 11:00 POWER SUPPLY ARCHITECTURE FOR HIGH TEMPERATURE CHUCK SYSTEMS, L. Teodorescu, A.-S. Gheorghe*, F. Draghici, Gh. Brezeanu, I. Rusu, “Politehnica” Univ. of Bucharest, *Infineon Technologies Romania SRL, Romania.
     
SD.5 11:20 IMPROVING FLASH MEMORY ENDURANCE AND CONSUMPTION WITH ULTRA-SHORT CHANNEL-HOT-ELECTRON PROGRAMMING PULSES, J. Postel-Pellerin, P. Chiquet, V. Della Marca, T. Wakrim, G. Just, J.-L. Ogier*, Aix-Marseille Univ., IM2NP-CNRS, *STMicroelec­tronics, Rousset, France.

13:00- 14:00   LUNCH

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