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Tuesday, October 13, 17:30, Room "A"
SEMICONDUCTOR DEVICES
Session:
SD: Oral presentations
Chair:
D. Dobrescu, “Politehnica” University of Bucharest, Romania
M. Brezeanu, Honeywell Romania SRL, Bucharest, Romania
SD. 1
17:30 |
CLASSIC AND ALTERNATIVE METHODS OF p-TYPE DOPING 4H-SiC FOR INTEGRATED LATERAL DEVICES, M. Lazar, D. Carole,
C. Raynaud, G. Ferro, S. Sejil, F. Laariedh,
C. Brylinski, D. Planson, H. Morel, Université de Lyon, CNRS, France |
SD. 2
17:50 |
A SETUP FOR VERY HIGH TEMPERATURE MEASUREMENTS OF POWER SEMICONDUCTORS EXCEEDING 500C,C. Unger,
M. Mocanu, M. Ebli, M. Pfost, Reutlingen University, Germany |
SD. 3
18:10 |
RELIABILITY CHARACTERIZATION OF POWER DEVICES WHICH OPERATE UNDER POWER CYCLING,D. Simon1,2, C. Boianceanu1, G. De Mey3, V. Ţopa3, 1Infineon Technologies Romania, Bucharest, Romania, 2Technical University of Cluj-Napoca, Romania, 3University of Ghent, Belgium |
SD. 4
18:30 |
NEW BIMOS TRANSISTOR IN 28nm FDSOI TECHNOLOGY: OPERATION IN 4-GATE JFET MODE,Ph. Galy1, S. Athanasiou1,2,
S. Cristoloveanu2, 1STMicroelectronics, Crolles, France, 2IMEP, Grenoble Cedex 1, France |
20:30 BANQUET, RINA Sinaia Hotel, Restaurant Hall |
