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Tuesday, October 11, 14:00, Room Bucegi
SEMICONDUCTOR DEVICES
Session:  SD: Oral presentations

Chair: 
D. Dobrescu, “Politehnica” Univ. of Bucharest, Romania
M. Brezeanu, Honeywell Romania SRL, Bucharest, Romania

SD. 1
14:00

POWER CYCLING AND SURGE CURRENT TESTER FOR SiC POWER DEVICES,
V. Banu1, P. Brosselard2, X. Jordá3, P. Godignon3,
1D+T Microélectronica A.I.E., Catalonia, Spain,
2Caly Technologies SAS, Villeurbanne Cédex, France,
3IMB-CNM, CSIC, Catalonia, Spain.

SD. 2
14:20

SiO2/SiC INTERFACE IMPROVEMENTS USING AN OXIDIZED THIN FILM OF a-Si,
R. Pascu1, F. Craciunoiu1, M. Kusko1, Gh. Pristavu2, Gh. Brezeanu2,

1IMT Bucharest,
2Univ. “Politehnica” of Bucharest, Romania.

SD. 3
14:40

EXPERIMENTAL ANALYSIS OF THE GATE-LEAKAGE-INDUCED FAILURE MECHANISM IN GaN HEMTs,
C. Unger1, M. Mocanu2, M. Pfost1, P. Waltereit3, R. Reiner3,
1TU Dortmund,
2Reutlingen Univ., Reutlingen,
3Fraunhofer Inst. for Applied Solid State Physics, Freiburg, Germany.

15:20–15:50   COFFEE BREAK

 

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