Prof. PHILIPPE GODIGNON

He received his PhD in Electrical Engineering in 1993 from INSA Lyon (France). Since 1990, he has been working in the Power Device and System group of the Centro Nacional de Microelectrónica in Barcelona (CNM) on Si and SiC IGBT/VDMOS devices design and technologies. His competences cover the power devices and integrated circuits technological and electrical modelling, technological process development as well as the electro-thermal characterisation. More recently, he has also been working on Carbon based materials synthesis and processing (CNT, graphene, polymers and Diamond) for nanotechnologies and biosensors. He is co-author of more than 235 publications in international journals and conferences and of 16 patents. He is currently Head of the Wide Band Gap Devices group at CNM.