The 40th edition of the


an IEEE event (since 1995)

Sinaia, Romania (11-14 October 2017)

Si-based Transistor and Analog-Mixed-Signal Circuit Scaling and the Natural Progression of Moore's Law to Silicon Quantum Computing at the Atomic Scale
Sorin Voinigescu

This presentation will compare the high frequency performance scaling of SiGe HBTs and MOSFETs to 2-3nm gate length and beyond 2THz transistor fMAX based on technology CAD (TCAD) and atomistic simulations. Characterization techniques and S-parameter measurements of state-of-the-art silicon MOSFETs, SiGe HBTs, and of a variety of HBT-HBT and for  MOS-HBT cascodes from DC to 325 GHz will be discussed along with simulations of the scaling of analog and mixed-signal mm-wave benchmark circuit performance from the current to future technology nodes. Finally, we will take a look at the room-temperature operation requirememts for coupled double quantum-dot Si qubits which rely on resonant tunnelling  multiple-gate MOSFET structures with sub-5nm dimensions in all directions.