The 40th edition of the


an IEEE event (since 1995)

Sinaia, Romania (11-14 October 2017)

Konstantinos Zekentes

Konstantinos Zekentes received his undergraduate degree in Physics (1983), from the University of Crete, Greece, and his Ph.D. (1989), in Physics of Semiconductors, from the University of Montpellier, France.

 He is currently a Senior Researcher with the Microelectronics Research Group (MRG) of the Foundation for Research and Technology-Hellas (FORTH) in Heraklion, Crete, Greece. He is the responsible person for coordinating and supervising the MRG's effort for the development of SiC-related technology for elaborating high power/high frequency devices. His basic research interests are (a) in Molecular Beam Epitaxy is the growth of SiC nanostructures, (b) in physical characterization, to determine the optimum methods for evaluating the material quality during the device processing and (c) in devices, to develop high frequency-high power diodes and transistors based on 4H-SiC. Dr. Zekentes has supervised 35 Bachelor diploma work, 9 MSc, 3 PhD and 4 post-docs. Dr. Zekentes has more than hundred journal and conference publications and one US patent. Moreover, he was the main contact person from FORTH for international and national