MINAFAB Characterization equipments

SE 800 XUV spectroscopic ellipsometer

Technical characteristics:

The  SE  800  XUV  is  a  high  performance  spectroscopic ellipsometer in the UV/VIS range featuring both fast data acquisition and full spectral resolution. The  high  measurement  precision  is  further  improved  by  tracking  the  computer  controlled motorized polarizer.

  • Spectral range: 240 –800  nm;
  • Micro-spot diameter: 200 mm;
  • X-Y maping option;
  • Operating Software: SPECTRARAY  II/WINDOW;


SE 800 XUV ellipsometer assures   fast measurement of Ψ and ∆ spectra makes and is an ideal tool for  analysis and characterization for the nanometric thin films, interfaces, multi layer structures from different materials – dielectrics, conductive oxides, polymers,  semiconductors.

The WINDOWS based SPECTRARAY II operating software includes a large integrated package of modeling, simulation, and fit programs in order to support the customer for successfully processing even complex tasks. SPECTRARAY is able to fit any multilayer structure (single, stack, periodical groups) for ψ, ∆; tan ψ, cos ∆ and Fourier coefficients, transmission, reflection, etc. This includes anisotropic layers, dispersion relations for layers - Cauchy, Sellmeier model, Schott glass, Drude-Lorentz model (oscillators), Lorentz, Urbach, Leng oscillator, Tauc-Lorentz oscillator, Forouhi-Bloomer, polynomial dispersion and index gradient (effective medium approximations-Maxwell-Garnett, Bruggeman, Lorentz-Lorenz, Clausius-Mossotti). The SPECTRARAY operates with fast, regressive fitting algorithms for optical models to measured data.



SE 800 XUV ellipsometer can be used  for: 

  • measuring optical constant, index of refraction (n) and the extinction coefficient (k) for a single layer permits one to determine the material composition and modeling of optical performance;
  • thickness of thin films and multilayer structures. If the optical constants are approximately known, then ellipsometry can determine the thickness, interface roughness, and inhomogeneity in multilayer structures;
  • thin-film deposition process optimisation. Ellipsometry can be  used to study the formation and properties of thin films on thick substrates, e.g., ZnO, CdS, ITO, polymer on semiconductor substrate (Si, SiO2/Si, A3B5 ).

Layers characterized regarding index of refraction (n) and thickness (d) using SE 800 XUV: transparent oxide layers (TiO2, ZnO, SiO2, SiON, SnO2 e.a); porous semiconductor layers; nanocomposite materials (doped polymers layers); polymers (PMMA, PVA, PANI)  (silicon, glasses). 



  • European Centre of Excellence in Microwave, Millimetre Wave and Optical Devices, based on Micro-Electro-Mechanical Systems for Advanced Communication Systems and Sensors -  MIMOMEMS (FP7-Capacities) 2008-2010;
  • Flexible Patterning of Complex Micro Optical Structures using Adaptive Embossing Technology  FLEXPAET (IP- FP7/NMP) 2008-201;

Application scientist: dr. phys. Munizer Purica, munizer.purica@imt.ro



top of page

Last update: March 5, 2012