Description

Reactive Ion Etching instrument, manual loading, capable of processing wafers up to 6”, four process gases: CF4, SF6, O2 and Ar, maximum RF power 600W, equipped with a fore pump and a turbo molecular pump capable of reaching pressures in the reaction chamber down to 10-6 mbar. Operational.

******************************************************************

Applications:

Typical applications for the basic configuration are:

• the etching of dielectrics (SiO2, Si3N4),
• semiconductors (Si),
• polymers and metals (Au, Pt, Ti, Ni).

******************************************************************

HOME

Last update: February 19, 2009