Description

• vacuum level in source chamber: 10-6 torr
• vacuum level in implantation chamber: 10-6 torr
• energy domain: 30 KeV – 140 KeV
• boron implantation dose: 100 µC/cm2 at ion cluster current of 350 µA ±30 µA
• phosphorus implantation dose: 100 µC/cm2 at ion cluster current of 1000 µA ±50 µA
• loading capacity: 50 pcs. wafers Ø2” or 25 pcs. wafers Ø3” per run

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Applications:

• electronics, electrooptics, photonics, biosensors.

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Last update: May 19, 2009