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Results

New reconfigurable micromachined filters dedicated to reconfigurable frontends for mobile communication systems 3G and "beyond 3G" which endure the DCS 1800MHz and WLAN 5.2 GHz. Standards.

Structures of reconfigurable micromachined filters dedicated to reconfigurable frontends for mobile communication systems which endure the DCS 1800MHz and WLAN 5.2 GHz. Standards - design and experiments.


Layout of the membrane suspended part of the reconfigurable filter
 

Layout of the bulk part of the reconfigurable filter

Simulated response of the reconfigurable filter (for 1.8 GHz range) with the switch in the DOWN state

Simulated response of the reconfigurable filter (for WLAN standard) with the switch in the UP state


Filter structure with air bridge - detail with the airbridhe on the micromachined membraneFilter structure with air bridge - detail with the airbridhe on the micromachined membrane

Detail of the spiral inductor detail from the filter (optical image)

SEM image with the interdifitated capacitor (detail)

 

A concept model for new reconfigurable micromachined filters dedicated to reconfigurable frontends for mobile communication systems 3G and "beyond" 3G" which endure the DCS 1800MHz and WLAN 5.2 GHz. Standards were developed.

The filter DCS1800 in the ON state

SEM image of an air bridge

S parameter measurements between 1GHz and 8 GHz were done using the "on wafer" characterization equipment (Suss Microtec and 37397D VNA from Anritsu) acquired by the laboratory with funds from PN II Capacities program and European FP 7 - Regpot project MIMOMEMS. The measured results are in good concordance with the simulated ones. The measured losses are with 1.8 db over the simulated

Frequency response for the reconfigurable filter in the ON state

Detail of the frequency response

 

The WLAN 5.2 filter was processed on high resistivity <100> orientation silicon wafers, 400 µm thick. The capacitors and the inductors are processed on dielectric micromachined membrane. The filter structure is visible through the transparences of the membrane, in the SEM image

SEM top image of the
WLAN filter
SEM bottom image of the
WLAN filter
Frequency response

 

The results of the microwave measurements shows 2.75 dB attenuation at 5.5 GHz and one over 40 dB at 8 GHz. (Fig.11).

 

A request for licence was submitted to OSIM for "Apparatus for signal processing of radio backscatter signals provided by modulating RFID cards" (authors V Buiculescu, D. Neculoiu, A. Muller) with the number A/01073/08.11.2010 15 ISI papers and 33 conference papers (international and national), a book and a chapter in a book were reported during the project.

Papers were published in: IEEE Trans on MTT, Electron Devices Letters, Electron Letters, High Performance Polymers, J. Polym. Sci. Part A: Polym. Chem., Applied Optics. MIMFOMEMS research teams have proposed international projects in FP 7 and connected programs calls.

The Romanian researchers participated in 14 consortium and 6 projects were winning: 2 FP7, three ENIAC and one MNT ERA Net.


MMID Tag for 60 GHz having a substrateless Schottky diodes ("membrane Schottky") of a very small area destinated to the detection applications in millimeter and under millimeter waves


Schottky diode structure micromachined on GaAs membrane

White light interferometry of the Schottky diode structure

A concept model for 60 GHz monolithicaly integrated receiver on GaAs having a substrateless Schottky diodes ("membrane Schottky") of a very small area to be used as MMID Tag for the detection applications in millimeter and under millimeter waves with a cut-off frequency of around 1THz was developed. The Schottky diodes was processed through GaAs micromachining for applications concerning in communications in the millimeter and under millimeter waves domain. The Schottky diode has as a support a GaAs thin membrane and was realized in a integrated geometry with micromachined passive components (filters, antennae).

The structure of the receiver based on 60 GHz folded slor antenna
pentru 60 GHz

The experimental set-up for microwave measurements

The bias DC current was 1 µA. At the working frequency of 61 GHz, 7.74 dBm were measeured at the outpou of the mm-wave source.

The variation of the voltage on the Schottky diode versus frequency


Micromachined Galium Nitride photodetector structures

SEM image of a MSM detector on GaN membrane



Photodetector MSM structure on GaN membrane


Detail of the MSM from the photodetector structure on GaN membrane


 
 
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