Project objectives

The NANOTEC project aims to generate innovative approaches towards novel RF/mm-wave systems with increased functionality and potentially lower cost addressing future needs of European industry.
NANOTEC will develop 4 Demonstrators (1: 10-24 GHz reflect arrays for aerospace, 2: 71-86 GHz frequency-agile LNA/PA for E-band PtP communication, 3: 94 GHz high-sensitivity front-ends for passive imaging and 4: 140 GHz radar front-ends for active imaging) with advanced functionalities based on enabling technologies and via monolithic integration of high-performance RF-MEMS switches in GaN/GaAs/SiGe IC foundry processes. NANOTEC will aim to improve reliability of RFMEMS by using NANO structured materials and to demonstrate added-value by employing the
proposed GaN/GaAs/SiGe MEMS-ICs for 10-140 GHz applications

Romanian group objectives in NANOTEC

  • Preliminary study of CNT growing for minimums with preliminary mechanical properties evaluation; web page elaboration
  • Design of the 94 GHz high-sensitivity (switched low-noise) antenna front-end for passive imaging realized using GaAs and SiGe RF-MEMS
  • Design and layout of test-structures and key building-blocks for the 94 GHz high-sensitivity (switched low-noise) antenna front-end for passive imaging realized using GaAs and SiGe RF-MEMS technologies
  • Development and integration of single oriented carbon nanotubes in silicon nitride dielectric¬†
  • Development and Fabrication of MiniMEMS
  • Development and modeling of the RF-MEMS embedded GaN technology
  • Characterization of the high-power robust GaN RF-MEMS chip-sets for 10-24GHz
  • Assembling of the GaN RF-MEMS demonstrator module for 10-24 GHz
  • Characterization of the GaAs/SiGe RF-MEMS low-noise blocks for 94GHz
  • Dissemination and exploitation activities