Overview

Electronic nanodevices based on oxidic materials are extensively studied as forthcoming replacements with smaller dimensions to the classic electronic devices in the CMOS integrated circuits, as well as advanced electronic devices capable of using the quantum properties associated with the electron spin. Our goal in the framework of this project is to investigate and to achieve MOSFET nano-demonstrators which use ultrathin oxidic films doped with Rare Earth ions (MOx RE) or Transition Metal ions (MOx TM) suitable for the two types of envisaged applications. They will provide a better understanding of the fundamental underlying phenomena which pose restrictions to the performance of present devices; contributions will also be brought to the development of new methods of atomic scale and nanometric scale modelling of the new generation of nanoelectronic devices.








 

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