Buton.jpg (695 bytes)  First name: Cecilia

Buton.jpg (695 bytes)  Surname: Codreanu

Buton.jpg (695 bytes)  Date and place of birth: November 05, 1949

Buton.jpg (695 bytes)  Education: 1972 - M.Sc. in Physics Engineering degree, Faculty of Electronics and Telecommunications, "Politehnica" University of Bucharest (P.U.B.)

Buton.jpg (695 bytes)  Professional experience:

wpe5.jpg (680 bytes)  Design, manufacturing and characterization of semiconductor devices and ICs: BJTs, JFETs and MESFETs, MOSTs, VCRs, CRs, Bipolar Analog ICs,
wpe5.jpg (680 bytes)   Magneto-transistors and magnetic sensors
wpe5.jpg (680 bytes)  CAD (semiconductor devices and ICs), mathematical modeling and simulation
wpe5.jpg (680 bytes)  Physics of semiconductor materials and devices, physics of defects, radiation effects on semiconductor materials and devices
wpe5.jpg (680 bytes)  New materials and processes: SiC, SOI

Buton.jpg (695 bytes)  Career:

wpe5.jpg (680 bytes)  1970 -1996: scientific researcher, Research Institute for Electronic Components (ICCE) – Bucharest
wpe5.jpg (680 bytes)  1996 - present: senior scientific researcher, National Institute for R&D in Microtechnologies (IMT-Bucharest); Laboratory "Microphysical characterisation"

Buton.jpg (695 bytes)  Stages abroad:

wpe5.jpg (680 bytes)  2003, "Politehnica" University of Bucharest, "Quantum Transport in Deep Submicron Devices", intensive course
wpe5.jpg (680 bytes)  2000, NATO-ASI, Erice, Italy, "Defects in SiO2 and Related Dielectrics: Science and Technology", school
wpe5.jpg (680 bytes)  1996, "Politehnica" University of Bucharest, "Design of Computer Experiment for Process and Device Modelling", intensive course
wpe5.jpg (680 bytes)  1993, "Politehnica" University of Bucharest, "New Advances in Semiconductor Device Simulation" intensive course

Buton.jpg (695 bytes)  Present position: senior scientific researcher

Buton.jpg (695 bytes)  Research interests:

wpe5.jpg (680 bytes)  deep submicron semiconductor devices,
wpe5.jpg (680 bytes)  nanostructures,
wpe5.jpg (680 bytes)  nanotechnologies and nanomaterials:

wpeB.jpg (687 bytes)  characterisation methods and techniques
wpeB.jpg (687 bytes)  physical properties
wpeB.jpg (687 bytes)  modelling
wpeB.jpg (687 bytes)  simulation

Buton.jpg (695 bytes)  Past and current projects:

wpe5.jpg (680 bytes)  "Advanced technique used to characterise dielectrics in capacitive microtransducers" National Research Program "MATNANTECH" (2002-2004)
wpe5.jpg (680 bytes)  "Technological Process for Micromachining Magnetotransistors", National Research Program "RELANSIN" (2001 – 2003)
wpe5.jpg (680 bytes)  "Integrated Hall Sensor Technological Process for Accurate Magnetic Field Measurement", National Research Program "RELANSIN" (1999 – 2003)
wpe5.jpg (680 bytes)  "Irradiation Technique to Increase the Switching Speed of Semiconductor Devices", National Research Program "ORIZONT 2000" (1998-2000)

Buton.jpg (695 bytes)  Main scientific publications:

Blue_Arrow25D.gif (140 bytes)  Papers in periodicals:

wpe5.jpg (680 bytes)  C. Codreanu, M. Avram, E. Carbunescu, E. Iliescu, "Comparison of 3C-SiC, 6H-SiC and 4H-SiC MESFETs Performances" "Materials Science in Semiconductor Processing" vol. 3/1-2, pp. 137-142, May 2000
wpe5.jpg (680 bytes)  E. Iliescu, C. Codreanu, M. Badila, V. Banu, A. Badoiu, "Post-Irradiation Effects in MOS Structures" "Nuclear Instruments and Methods in Physics Research B – Beam Interactions with Materials & Atoms" Vol. 161-163, Issue 1-4, pp. 381-386, March 2000
wpe5.jpg (680 bytes)  C. Ravariu, A. Rusu1, D.Dobrescu1, L. Dobrescu1 , F. Ravariu, C. Codreanu, M. Avram "A Mathematical Model for Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film" MSM'2000, IEEE Int. Conf. Proc., p.404-407

Blue_Arrow25D.gif (140 bytes)  Other contributions:

wpe5.jpg (680 bytes)  M. Avram, C. Codreanu, O. Neagoe, C. Voitincu, M. Simion, "A Novel Silicon Integrated Hall Sensor for Accurate Magnetic Field Measurement", EUROSENSORS 2002, Prague, Czechoslovakia
wpe5.jpg (680 bytes)  M. Avram, O. Neagoe, C. Codreanu, C. Voitincu, M. Simion, "An Optimised Bipolar Lateral Magnetotransistor ", CAS 2002, Sinaia, Romania
wpe5.jpg (680 bytes)  C. Codreanu, V. Obreja, C.Ravariu, E. Iliescu, "Excess Surface Currents in SiC Diodes", ICMAT, 2001, Singapore
wpe5.jpg (680 bytes)  C. Codreanu, E. Iliescu, V. Obreja, "Silicon Diode Electrical Characteristics Under Electron-Beam Irradiation Conditions - Experiments and Theoretical Interpretation", CAS 2001, Sinaia, Romania
wpe5.jpg (680 bytes)  C. Codreanu, E. Iliescu, A. Badoiu, M. Avram, C. Ravariu "Radiation Induced Effects in the Si/SiO2 System" NATO-ASI, ITALY 2000
wpe5.jpg (680 bytes)  C. Ravariu, A. Rusu, C. Codreanu, F. Ravariu "The Flat-Band and Threshold Voltage of a Pseudo-MOS Transistor Made in Simox Technology", 2000, Iasi, Romania
wpe5.jpg (680 bytes)  C. Codreanu, E. Iliescu, A. Angelescu, I. Kleps, "The P-N Junction in SiC and Its High Temperature Limit", TFD 2000, Turkey
wpe5.jpg (680 bytes)  C. Codreanu, E. Vasile, E. Iliescu, A. Badoiu "Computer Simulation of Silicon Free Carrier Lifetime Reduction by Electron-Beam Irradiation", ICACS18, 1999, Denmark

Buton.jpg (695 bytes)  Member of professional associations: IEEE membership, Societies: Electron Devices, Circuits and Systems, Instrumentation and Measurements, Computers

Buton.jpg (695 bytes)  Additional information: Referent of the journal IEEE Transactions on Electron Devices

Buton.jpg (695 bytes)  Foreign languages: English, French

Buton.jpg (695 bytes)  Contact information: e-mail:, tel: +40-21-490.84.12, fax: +40-21-490.82.38

wpe3.jpg (1942 bytes)