ROMANIAN JOURNAL OF INFORMATION SCIENCE AND
TECHNOLOGY
Volume 3, Number 1, 2000, 5 - 16
Development and Investigation of
Oscillator Diodes
for the Millimeter Wavelength Range
A.E. Belyaev, R.V.
Konakova, V.V. Milenin, E.A. Soloviev, D.I. Voitsikhovskyi
Institute of Semiconductor Physics,
National Academy of Sciences of Ukraine, Kiev, Ukraine
E-mail: [email protected]
N.S. Boltovets, V.V. Basanets,
V.A. Krivutsa
State Scientific & Research Institute "Orion", Kiev, Ukraine
E-mail: [email protected]a
V.F. Mitin
Microsensor Ltd., Kiev, Ukraine
P.O. Box 95, 252108 Kiev-108, Ukraine
E-mail: [email protected]
Abstract.
We present
the results of development of microwave oscillating diodes for 36 to 40 and 58 to 62 GHz
frequency ranges. It was performed using the membrane technology on silicon. The
degradation processes occurring at such diodes interfaces during accelerated tests were
studied. A model for catastrophic failure due to a thermal pinch formation in the active
area is proposed. |