ROMANIAN JOURNAL OF INFORMATION SCIENCE AND
TECHNOLOGY
Volume 3, Number 1, 2000, 17 - 28
The Electric Properties of
Wafer Bonded Si p-n Junction
Laszlo DOZSA, Zsolt J. HORVATH, Vo
Van TUYEN, Bela SZENTPALI
Hungarian Academy of Sciences, Research Institute for Technical Physics and
Materials Science,
Budapest, P.O.Box 49, H-1525 Hungary,
E-mail: [email protected]
D. Pasquariello, K. Hjort
Uppsala Universitet, Department of Materials Science
Microstructure Technology Group
P.O.B. 534 Uppsala, Sweden, SE-751 21
Abstract.
Wafer bonding is in many
known applications a successful tool to integrate devices prepared on different
semiconductor materials and structures, especially in optoelectronic and sensor
applications. Unfortunately, wafer bonding is a technology not well characterised and
understood, only few reports are found on the limitations of wafer bonding and its
applications. The investigations are mostly limited to n-n or p-p
homojunctions.
The aim of this work is to investigate the effect of the bonding on the electrical
properties and to investigate the defects created by wafer bonding, hence we study wafer
bonded slightly doped silicon p - silicon n junctions. For
investigations XPS, ellipsometry, current - voltage, capacitance -voltage
characterisation, and deep level transient spectroscopy were applied. |