F. LE NORMAND, C. S. COJOCARU, B. VIGOLO, E. MINOUX, P. LEGAGNEUX, I. KLEPS, F. CRĂCIUNOIU, A. ANGELESCU, M. MIU, M. SIMION
Selective Growth of Carbon Nanotubes Vertically Aligned on Array of Processed Microelectrodes

Abstract.
The development of field-effect devices induced a demand for very fine, high-aspect-ratio tips, suitable for scanning tunneling and force microscopy and field-effect emitter arrays. Silicon pyramidal structures field emitter array (Si-FEA) was fabricated using pure thermal silicon dioxide as a mask for silicon selective etch. Based on a new technology of carbon nanotubes selective growth vertically aligned on the tip of silicon pyramidal structures the emission efficiency of the processed silicon tips could be increased. The paper present first results of this technology.