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Tuesday, October 14, 9:00, Room “A”
PLENARY SESSION 3
(Invited Speakers)
Session P3: Oral presentations
Chair:
D. Foty, Gilames Associates LLC, Fletcher VT, USA
M. Mihaila, Honeywell Romania, Bucharest, Romania
P3. 1
9:00 |
InN: THE LOW BANDGAP III-NITRIDE SEMICONDUCTOR, A. Georgakilas, Univ. of Crete, Physics Department, Microelectronics Research Group (MRG), Inst. of Electronic Structure & Laser (IESL) Foundation for Research & Technology Hellas (FORTH), Heraklion, Crete, Greece. |
P3. 2
9:30 |
ELECTRICAL PERFORMANCE AT HIGH TEMPERATURE AND SURGE CURRENT OF
1.2 kV POWER RECTIFIERS: COMPARISON BETWEEN Si PiN, 4H-SiC SCHOTTKY AND JBS DIODES, J. Millán, V. Banu, P. Brosselard,
X. Jordà, A. Pérez-Tomás, P. Godignon, CNM-IMB-CSIC, Campus Univ. Autonoma de Barcelona, Spain. |
P3. 3
10:00 |
UN-COOLED 10 Gb/s DILUTE-NITRIDE OPTICAL TRANSMITTERS FOR THE 1300 nm WAVELENGTH RANGE, M. Dumitrescu1,
M. Wolf2, K. Schulz2, S. Wang3, A. Larsson3,
S. Sujecki4, E. Larkins4, P. Melanen5,
P. Uusimaa5, A. Laakso1, M. Pessa1, 1Tampere Univ. of Technology, Tampere, Finland, 2MergeOptics GmbH, Germany, 3Chalmers Univ. of Technology, Sweden, 4Univ. of Nottingham, UK, 5Modulight Inc., Finland. |
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