SD.1
11:30

HIGH TEMPERATURE SiC SCHOTTKY DIODES WITH STABLE OPERATION FOR SPACE APPLICATION, V. Banu1, P. Godignon1, X. Jorda1, M. Vellvehi1, J. Millan1, P. Brosselard2, D. Lopez3, J. Barbero3, 1CNM (CSIC), Spain, 2Lab. Ampere, France, 3ALTER Technology, Spain.

SD. 2
11:50

DESIGN OF QUASI-VERTICAL GaN HIGH POWER SCHOTTKY DIODES BASED ON FIELD PLATE TERMINATION, V. Sundaramoorthy, I. Nistor, ABB Switzerland Ltd., Dattwil, Switzerland.

SD. 3
12:10

A SELF-CONSISTENT MODEL OF THE STATIC AND SWITCHING BEHAVIOUR OF 4H-SiC DIODES, S. Bellone, F. Della Corte*, L. Di Benedetto, L. Freda Albanese, G.D. Licciardo, Univ. of Salerno, Fisciano, *Mediterranea Univ. of Reggio Calabria, Italy.

SD. 4
12:30

AN INDUSTRIAL TEMPERATURE PROBE BASED ON SiC DIODES, F. Draghici1, M. Badila2, G. Brezeanu1, I. Rusu1, F. Craciunoiu3, I. Enache1, 1“Politehnica” Univ. of Bucharest, Romania, 2ON Semiconductor Corporation, USA, 3IMT-Bucharest, Romania.

SD. 5
12:50

DESIGN OF LOGIC GATES FOR HIGH TEMPERATURE AND HARSH RADIATION ENVIRONMENT MADE OF 4H-SiC MESFET, M. Alexandru, V. Banu, M. Vellvehi, P. Godignon, J. Millan, IMB-CNM, CSIC, Barcelona, Spain.