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Tuesday, October 15, 9:00, Room "B"
SEMICONDUCTOR DEVICES
Session D: Oral presentations
Chair:
M. Bazu, IMT Bucharest, Romania
M. Mihaila, Honeywell Romania, Bucharest,
Romania
D. 1
9:00
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ON THE VARIATION OF THE 2DEG CHARGE DENSITY WITH THE DENSITY OF THE SURFACE DONOR TRAPS IN AlGaN/GaN TRANSISTORS,
G. Longobardi, F. Udrea, Univ. of Cambridge, United Kingdom. |
D. 2
9:20 |
NEW BETA-MATRIX TOPOLOGY IN CMOS 32nm AND BEYOND FOR ESD/LU IMPROVEMENT,
J. Bourgeat, J. Jimenez, S. Dudit, P. Galy, STMicroelectronics, Crolles Cedex, France. |
D. 3
9:40 |
4H-SiC SCHOTTKY CONTACT IMPROVEMENT FOR TEMPERATURE SENSOR APPLICATIONS, F. Draghici, M. Badila, G. Brezeanu, G. Pristavu, I. Rusu, F. Craciunoiu*, R. Pascu*, “Politehnica” Univ. of Bucharest, IMT Bucharest, Romania. |
D. 4
10:00 |
HIGH SPEED SENSOR FOR HIGH VOLTAGE PEAK CURRENT-MODE BUCK CONVERTERS, M. Budaes, P. Deval*, P. Gimmel*, Microchip Inc. 4E, Bucharest, Romania, *Microchip Inc., St. Sulpice, Switzerland. |
D. 5
10:20 |
ESD PROTECTION WITH BIMOS TRANSISTOR FOR BULK & FDSOI ADVANCED CMOS TECHNOLOGY, Ph. Galy, J. Bourgeat, T. Lim,
C. Fenouillet-Beranger*, D. Golanski, STMicroelectronics, Crolles, *CEA-Leti, Grenoble Cedex 9, France. |
D. 6
10:40
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AVALANCHE RUGGEDNESS AND FAILURE ANALYSIS OF A TRENCH AND PLANNAR GATE MOSFET, W. Cailin, F. Kai*, S. Yang,
P. Chao, Xi’an Univ. of Technology, *Engineering Univ. of CAPF, Xi’an, P.R. China. |
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▲ Student paper
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