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Monday, October 12, 10:15, Room "A"
PLENARY SESSION 2
(Invited Papers)
Session: PS2: Oral presentations
Chair:
M. Dragoman, IMT Bucharest, Romania
A.N. Nazarov, Lashkaryov’s Institute of
Semiconductor Physics, Kiev, Ukraine
PS2. 1
10:15 |
HIGH TEMPERATURE SENSORS BASED ON SILICON CARBIDE (SiC) DEVICES, Gh. Brezeanu1, M. Badila1, F. Draghici1, R. Pascu1,2, Gh. Pristavu1, F. Craciunoiu2, I. Rusu1, 1”Politehnica” University of Bucharest, 2IMT Bucharest, Romania |
PS2. 2
10:45 |
HIGH-VOLTAGE SiC DEVICES: DIODES AND MOSFETs, J. Millán1, P. Friedrichs2,
A. Mihaila3, V. Soler1, J. Rebollo1, V. Banu1,
P. Godignon1, 1IMB-CNM-CSIC, Campus UAB, Barcelona, Spain, 2Infineon AG, Erlangen, Germany, 3ABB Switzerland Ltd, Baden, Switzerland |
PS2. 3
11:15 |
A STUDY TO IMPROVE IGBT RELIABILITY IN POWER ELECTRONICS APPLICATIONS, V.K. Sundaramoorthy, E. Bianda, G.J. Riedel, ABB Switzerland Ltd, Baden, Switzerland
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11:45-12:00 PHOTO REMEMBER CAS 2015
in front of the RINA Sinaia Hotel
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