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A. IOACHIM,
M. I. TOACSĂN, L. NEDELCU, M. G. BANCIU, C. A. DUŢU, M. BUDA, F. SAVA, M.
POPESCU, N. SCĂRIŞOREANU, M. DINESCU
Dielectric Properties of (Ba,Sr)TiO3 Thin Films for Applications in
Electronics
Abstract. Barium strontium titanate (BST) bulk ceramic was used as target
for PLD thin film deposition. In order to avoid stoichiometry modification
during the deposition, a more reactive oxidant ambient in the chamber was
produced by using a radiofrequency discharge 13.56 MHz, 150 W. Thin films of
stoichiometric BST was deposited on alumina substrate with the thickness between
400 and 500 nm heated at 650°C. An aditional anealing was made at 800°C for
6 hours. XRD and SEM were used for sample characterization. Capacity
measurements at 100 kHz were performed versus temperature.
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