Over the past five decades nearly all disruptive advances in science and technology have resulted from the discovery of a new material and, especially, from the way its properties have been exploited by advanced engineering to create novel devices and systems. Subsequently, the continuous development of silicon (Si)-based microelectronics devices has revolutionized our everyday life, but they are now operating close to their theoretical limits in terms of device temperatures, power densities, operational frequencies and dimensions. Due to these limitations, the growth rate of Si-based CMOS technologies is starting to level out and this is becoming a bottleneck for further progress, particularly for the growing field of high-frequency electronics (HFE). To drive progress in devices operating at high frequencies, the exploitation of disruptive materials is absolutely crucial, but a roadmap for the development of these materials and HFE devices is lacking.

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