Objective 1. The growth and characterization of ferroelectric films at the wafer scale

After preliminary studies on the manufacturing parameters and the establishment of the technological workflow, preliminary device layouts and two preliminary sets of photolithographic masks are obtained. Following the full morphological, structural, dielectric and ferroelectric characterizations of NiO:N and HfO2:ZrO ferroelectric ultrathin films using different concentrations doping of N grown using RF –sputtering and Atomic Layer Deposition (ALD) will obtained a preliminary synthesis procedures.

Objective 2. Characterization of ferroelectric thin films

After analyzing the data obtained in the characterization and the investigation of factors influencing the characteristic ferroelectric films obtained will result optimize synthesis procedures and technical parameters sheets, thus they are established establish the technical specifications of the demonstrator 1 (DM1) and demonstrator 2 (DM2).

Objective 3. Validation of TRL 3, TRL 4 and demonstrators functionality
Based on the data collected from WP1 and WP2 in combination with the design and simulation results, an optimized scheme of devices and manufacturing workflows will result demonstrating the functionality of both demonstrators.