The main goal of the project is the development of small-size, low-cost, high-sensitivity GaAs monolithic integrated receivers for millimeter-wave applications. The proposed circuit is a direct detection receiver operating in the W-band (75 – 110 GHz) and monolithically integrates an on-chip antenna with the detector circuit, on the same GaAs semi-insulating substrate.

The main objectives of the project are: O1. The design and characterization of antennas processed on semi-insulating GaAs substrate together with dielectric lenses manufactured through 3D printing; O2. The implementation of 3D electromagnetic/ non-linear circuit co-simulations as a design technique for antennas monolithically integrated with Schottky diodes into a direct detection receiver; O3. Technological development for fabrication of Schottky diodes with submicronic contact area and reduced series resistance; O4. The characterization of the front-end in terms of isotropic tangential signal sensitivity and isotropic voltage sensitivity.

The diode and the circuit blocks will be fabricated on commercially acquired GaAs wafers with the epitaxial layer structure (thickness, doping) optimized by design for low series resistance and a cutoff frequency higher than 800 GHz. The targeted total area of the monolithic integrated receiver (including the antenna) is below 5 x 5 mm2. For the first time, a compact millimeter wave GaAs receiving front-end consisting of a planar antenna, a Schottky diode detector circuit and a 3D printed dielectric lens will be integrated together in a system-in-package approach. The project will offer a compact solution for GaAs receivers for millimeter wave applications such as imaging for concealed weapons detection, high data-rate short range communications for the Internet of Things or 5G communications.