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| 1. advance the knowledge on RF-MEMS, developing new integrated RF MEMS circuits based on Silicon, Gallium Arsenide and Wide band Gap Semiconductors (GaN, AlN). |
| 2. strengthen Romanian excellence on MEMS for RF and millimeter wave communications, |
| 3. spread excellence in the field of RF-MEMS. |
| 4. developing education and dissemination activities |