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77 GHz hybrid integrated silicon micromachined receiver |
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The technology was developed in cooperation with LAAS-CNRS Toulouse. Measurements in progres |
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77 GHz hybrid integrated silicon micromachined receiver - layout
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Technological flow |
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Detail of the wafer containing structures of 77 GHz hybrid integrated silicon micromachined receiver |
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60 GHz monolitic integrated receiver based on GaAs micromachining
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The technology was developed in cooperation with FORTH Heraklion. |
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Structure of the 60 GHz monolitic integrated receiver based on GaAs micromachining
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Detail of the Yagi-Uda antennae |
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Experimental detected voltage as a function of bias current for 60 GHz operating frequency |
Measured E-plane radiation pattern at 60 GHz (measurements performed at VTT Helsinki) |
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GaN membrane supported FBAR |
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The technology was developed in cooperation with FORTH Heraklion and TU Darmstadt
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Top optical photo of the active area of the experimental F-BAR structure. The gold area around the top electrode is the bottom metallization of the FBAR. It is seen from the top-side because the membrane is transparent.
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Return losses vs frequency for the GaN membrane supported FBAR structure
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Real (right vertical axis)and imaginary part (left vertical axis)of the impedance for the measured GaN FBAR test structure |
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ACOMEMS Scientific papers
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Published ISI papers |
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- A. Muller, D. Neculoiu, D. Vasilache, D. Dascalu, G. Konstantinidis, A. Kosopoulos, A. Adikimenakis, A. Georgakilas, K. Mutamba, C. Sydlo, H.L. Hartnagel, A. Dadgar, “GaN micromachined FBAR structures for microwave applications”, Superlattices &Microstructures, Vol 40, Issues 4-6, ISSN 0749-6036, 2006, pp 426-431
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A. Pantazis, D. Neculoiu, Z. Hazoupulos, D. Vasilache, M. Lagas, M. Dragoman, C. Buiculescu, I. Petrini, A. A. Muller, G. Konstantinidis, A. Muller “Millimeter wave passive circuits elements based on GaAs micromachining”, Journal of Micromechanics and Microengineering, vol.15,pp.S-53-S59, 2005.
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M. Saadaoui, P. Pons, R. Plana, L. Bary, P. Dureuil, D. Bourrier, D. Vasileche, D. Neculoiu, A. Müller “Dry followed by wetbackside etching processes for micromachined endfire antennae” Journal of Micromechanics and Microengineering,vol.15, Nr7, pg. S65-S71, 2005
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- D. Neculoiu, P. Pons, L. Bary, M. Saadaoui, D. Vasilache, K. Grenier, D. Dubuc, A. Müller and R. Plana “Membrane Supported Yagi-Uda Antennae for Millimeter-Wave Applications”, IEE Microwave, Antennas and Propagation, Vol 151, No. 4, August 2004, pp.311-314
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Papers presented at the scientific workshop |
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- A. Takacs, D.Neculoiu, D. Vasilache, A. Muller, P. Pons, H. Aubert, R. Plana "Tunable MEMS filters for millimeter wave applications"
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- D.Vasilache, M.Dragoman, G.Constantinidis, Y. Psychias, F.Vladoianu, T.Kostopoulos, C.Tibeica, L.Bary, A.Cismaru, D.Neculoiu, C.Buiculescu, I.Petrini, R.Plana, A.Müller "60 GHz Band RF MEMS Switch"
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- E. Hamciuc, I. Sava, M. Bruma, T. Köpnick, J. Stumpe , "Photoinduced optical anisotropy in modified polyimides"
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- I. Sava, M. Bruma, B. Schulz, J. Stumpe, "Light-induced properties in polyimides containing side azobenzene groups"
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- A.A. Muller, D. Neculoiu, D. Vasilache, A. Takacs, A. Cismaru, P.Pons, R.Plana "Micromachined bandpass filter with a new controlled resonance in the stopband for WLAN 5200 filter applications"
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- G. Brezeanu, A. Visoreanu, M. Brezeanu, F. Udrea, G.A.J. Amaratunga, I. Enache, I. Rusu, F.Draghici, "Off - state performances of ideal Schottky barrier diodes (SBD) on diamond and silicon carbide"
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- D.Neculoiu, F.Giacomozzi, L.Bary, D.Vasilache, A.A.Muller, B. Margesin, I.Petrini, C. Buiculescu, A.Takacs, R. Plana, A.Muller "Compact lumped elements micromachined band-pass filters with discrete switching for 1.8/5.2 GHz applications"
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- Ion Sava "Aromatic polyimides based on 3,3’-dimethyl-4,4’-diaminodiphenylmethane as potential material for interlayer dielectrics in RF MEMS circuits"
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- M. Bruma, I. Sava, E. Hamciuc, C. Hamciuc, M. D. Damaceanu "Synthesis and characterization of heterocyclic polyimides As high performance materials with potential applications in rf mems devices processing"
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