MINAFAB Processiong equipments

RTP- Rapid Thermal Processing system for Silicon, Compound Semiconductors,
Photonics and MEMS processes



- N2, O2, Ar, NH3


- 3-inch and 4-inch wafer capability;
- High reliability assures low cost of ownership;
- Stainless steel cold wall chamber technology;
- High process reproducibility;
- Ultra clean and contamination-free environment;
- High cooling rates and low memory effect;
- High vacuum version (10-6 mbar) is available for cleanest process conditions;
- Pyrometer and thermocouple temperature measurement are standard features;
- Fast digital PID temperature controller provides high and stable temperature accuracy (± 1°C) over the temperature range;
- Edge pyrometer viewport insures enhance temperature control of the susceptor for compound;




Performance characteristics:

  • Temperature range: RT to 1250°C
  • Ramp rate up to 200°C/s
  • Gas mixing capability with mass flow controllers
  • Vacuum range: Atmosphere to 10-6 Torr



  • Rapid Thermal Oxidation (RTO)
  • Rapid Thermal Nitridation (RTN)
  • Crystallization and Densification
  • Compound semiconductor annealing


  • Silicon wafers
  • Compound semiconductor wafers
  • Glass substrates
  • SiC and graphite wafers
  • Diffusion
  • Silicidation
  • Glass reflow
  • Sintering (contact alloying)


  • Shorter cycle time
  • Reduced dopant diffusion and contamination.

Contact Dr. Ileana Cernica[email protected]



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Last update: January 24, 2012