Articole ISI:

1, A. Enache, F. Draghici*, F. Mitu, R. Pascu* , G. Pristavu* , M. Pantazica, G. Brezeanu*, “PLL-Based Readout Circuit for SiC-MOS Capacitor Hydrogen Sensors in Industrial Environments”, Sensors, Vol. 22(4), pp 1462, 2022; https://doi.org/10.3390/s22041462

2. R. Pascu*, C. Romanitan, „Phase transition of nickel silicide compounds and their electrical properties”, in Journal of Materials Science: Materials in Electronics, 2021, 32, 16811–16823. https://doi.org/10.1007/s10854-021-06238-1, IF = 2.478 

3. R. Pascu*, G. Pristavu, G. Brezeanu, F. Draghici, P. Godignon, C. Romanitan, M. Serbanescu, A. Tulbure, „60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes”, in Sensors, Vol. 21, pp. 942, 2021. Doi: https://doi.org/10.3390/s21030942, IF = 3.576

Articol BDI:

1. R. Pascu, „Ultrashallow defects in SiC MOS capacitors”, Solid State Electronics Letters, Vol. 2, 2020, pp. 79-84. ISSN 2589-2088. https://doi.org/10.1016/j.ssel.2020.11.001

Proceedings indexat ISI

1.    R. Pascu, G. Pristavu, M. Stoian, C. Romanitan, M. Kusko, F. Draghici, D. T. Oneata, G. Brezeanu, “The effect of forming gas annealing on Al/Ti/n-Si contacts”, lucrare acceptată spre publicare în IEEE CAS Proceedings 2022.

2.    G. Brezeanu, G. Pristavu, R. Pascu, F. Draghici, “Schottky diode on Silicon Carbide (SiC) – Ideal detector for very wide temperature range sensors,” acceptat la Int. Conf. "Adv. Topics in Optoel., Microel. and Nanotechn. (ATOM),  2022.

3.    R. Pascu, G. Pristavu, M. Kusko, F. Draghici, G. Brezeanu, „Detecting anomalous behavior in Si MOS capacitors”, IEEE CAS Proceedings 2021, pp. 103 - 106, 2021.

Lucrari prezentate la conferinte internationale:

1.    R. Pascu, G. Pristavu, M. Kusko, F. Draghici, G. Brezeanu, „Detecting anomalous behavior in Si MOS capacitors”, prezentare orala, International Semiconductor Conference (CAS), 6 – 8 Octombrie 2021, prezentare online, Romania.

2.    R. Pascu, G. Brezeanu, G. Pristavu, F. Draghici, A. G. Pribeanu, A. M. Dragomir, S. Niculescu, „SiC technology for harsh environment applications”, prezentare orala, A XIII-a CONFERINTA DE STIINTA SI INGINERIA MATERIALELOR OXIDICE – CONSILOX, 1-3 octombrie 2021, prezentare online, Alba Iulia, Romania.

3.    R. Pascu, G. Brezeanu, G. Pristavu, F. Draghici, „Differential hydrogen sensor based on SiC MOS capacitors”, poster, ECSCRM 2021, 24—28 octombrie 2021, prezentare online, Tours, Franta.

4.    R. Pascu, “A Reliable Technology for Advanced SiC MOS Devices Based on Fabircation of High Quality Silicon Oxide Layers by Converting a Si”, prezentare orala, Humboldt Kolleg Global Challenges of the 21st Century Technological development and human health/quality of life, 18 – 22 noiembrie 2020, Hilton Garden Inn Hotel, Doamnei St. 12, Bucharest, Romania – lucrare invitata.