Dr. Fabrizio Roccaforte


Fabrizio Roccaforte received the M.Sc. Degree in Physics from the University of Catania (Italy) in 1996, and the PhD from the University of Göttingen (Germany) in 1999. Then, he was first visiting scientist at the University of Göttingen, and then scientific consultant at STMicroelectronics (Italy). In December 2001 he joined the permanent staff of CNR-IMM in Catania as a Researcher, and he became Senior Researcher in 2007.

His research interests are mainly focused in the field of wide band gap (WBG) semiconductors, (e.g., SiC, GaN,..) materials and devices processing for power electronics devices. He is co-author of more than 250 papers in international journals and conference proceedings, several review articles, 5 book chapters, 3 patents, and he has given several invited talks and lectures on SiC and GaN at international conferences. He has been chairman of three international conferences, and he is member of the Steering Committee of the conferences ECSCRM and EXMATEC.